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坚持重仓持有国电南端，潍柴动力这样的股现在不能上车。(1)MeltepitaxyisimprovedLPE,InAsSbthicklayers,FoundandpublishedpapersinJapan
Gaostudiedasastudentfor5years,andgotthedoctordegreeinelectronicengineering(PhD),inShizuokaUniversity,Japan,2002.Duringdoctorcourse,Gaoetal.foundanimprovedliquidphaseepitaxy(LPE)methodnamedmeltepitaxy(ME).InAsSbthickepilayerswithcutoffwavelengthsof812µmweregrownonInAssubstratesbymeltepitaxy.Thethicknessoftheepilayersreached100µm.Thisthicknesseffectivelysuppressedtheaffectionofthelatticemismatch,thuscrystalqualityoflongwavelengthInAsSbmaterialshasbeenraised.VanderPauwmeasurementsshowedthat300KelectronmobilitiesofInAsSbthicklayersarehigherthan50000cm2/Vswithcarrierdensitiesof(13)x1016cm3.
FoundandpublishedpapersinJapan:
[1]Y.Z.GaoandT.Yamaguchi,LiquidPhaseEpitaxialGrowthandPropertiesofInSbBiFilmsgrownfromIn,Bi,andSnSolutions,CrystalResearchandTechnology,1999,34(3):285292.
[2]Y.Z.Gao,X.Y.Gong,H.Kan,M.Aoyama,andT.Yamaguchi,InAs1ySbySingleCrystalswithCutoffWavelengthof812µmGrownbyaNewMethod,JapaneseJournalofAppliedPhysics,1999,38(4A):19391940.
[3]Y.Z.Gao,H.Kan,J.I.Murata,M.Aoyama,andT.Yamaguchi,HighPurityInxGa1xSbSingleCrystalswithCutoffWavelengthof78µmGrownbyMeltEpitaxy,JournalofELECTRONICMATERIALS,2000,29(10):L25L27.
[4]Y.Gao,H.Kan,andT.Yamaguchi,TheImprovementofLowTemperatureMobilityofInAs0.04Sb0.96EpilayerswithCutOffWavelengthof12.5µmbyAnnealing,CrystalResearchandTechnology,2000,35(8):943947.
[5]Y.Z.Gao,H.Kan,M.Aoyama,andT.Yamaguchi,GermaniumandZincDopedPtypeInAsSbSingleCrystalswithaCutoffWavelengthof12.5µm,JapaneseJournalofAppliedPhysics,2000,39(5A):25202522.
[6]Y.Z.Gao,H.Kan,F.S.Gao,X.Y.Gong,andT.Yamaguchi,ImprovedpurityoflongwavelengthInAsSbepilayersgrownbymeltepitaxyinfusedsilicaboats,JournalofCrystalGrowth,2002,234:8590.
InAsSbthicklayersgrownonGaAssubstratesbymeltepitaxy：
Y.Z.Gao,X.Y.Gong,Y.H.Chen,andT.Yamaguchi,HighQualityInAs0.04Sb0.96/GaAsSingleCrystalswithaCutoffWavelengthof12μmGrownbyMeltEpitaxy,ProceedingofSPIE,2006,6029:357363.
(2)AletterofProf.Robert
Prof.RobertinStanfordUniversitywrotealettertousin2001.HeisaneditorialboardofJournalofCrystalGrowth.“Intheopinionofthereviewers,meltepitaxyasinventedbyGAOetal.isanimportantnewdevelopmentforliquidphaseepitaxy.”
(3)MeltepitaxyandInAsSbthicklayersareinabookpublishedbyWILEY
M.Mauk,Chapter12.LiquidPhaseEpitaxy:ASurveyofCapabilities,RecentDevelopmentsandSpecializedApplications,inLiquidPhaseEpitaxyofElectronic,OpticalandOptoelectronicMaterials(edsP.CapperandM.Mauk),2007,JohnWiley&Sons,Ltd,Chichester,UK(PrintISBN:9780470852903).
(4)Patents
JapanPatentNo.2000－86379
ChinaPatentNo.ZL201310397546.0,ChangecompositionofInAsSbmaterials
(5)IEEEMembership
GaoisanIEEEMembership(IEEEMembershipNumber:94891511).
(6)VisitingProfessor
AfterreturnedtoChina,wenttoShizuokaUniversity,JapanagaintoworkasaVisitingProfessorforhalfayearin2011.
(7)UncooledlongwavelengthInAsSbphotodetectorsfabricatedbymeltepitaxy
HighsensitivityuncooledInAsSbphotoconductorswithlongwavelengthweresuccessfullyfabricated.ThedetectorsarebasedonInAsSbthickepilayerswiththethicknessof100µmgrownonInAssubstratesbymeltepitaxy.Immersionlensesweresetonthedevices.Atroomtemperature(295K),thephotoresponsewavelengthrangewas210µm.ThepeakdetectivitiesD*(6.5µm,800)werelargerthan1.0×109cmHz1/2W1.Theresponsetimeis101µs,whichisatleastthreeordersofmagnitudefasterthanheatdetectors.
[1]Y.Z.Gao,X.Y.Gong,G.H.Wu,Y.B.Feng,T.Makino,andH.Kan,UncooledInAsSbPhotoconductorswithLongWavelength,JapaneseJournalofAppliedPhysics,2011,50(6):0602061–0602063.
[2]YuzhuGao,XiuyingGong,GuanghuiWu,YanbinFeng,TakamitsuMakino,HirofumiKan,TadanobuKoyama,andYasuhiroHayakawa,InAsSbthickepilayersappliedtolongwavelengthphotoconductors,InternationalJournalofMinerals,Metallurgy,andMaterials,2013,20(4):393396.
[3]Y.Z.Gao,X.Y.Gong,J.J.Li,Y.B.Feng,T.Makino,H.Kan,T.KoyamaandY.Hayakawa,ImprovedperformanceofInAs0.07Sb0.93photoconductorsoperatingatroomtemperature,Optik,2017,142:6872.
。
美国是以虚拟经济为主，而股市又是虚拟经济的一个重要组成部分，股市垮，美国经济即垮。
站在大的趋势下BTC和很多币种连续几天都处于阴跌下滑状态，BTC更是形成了一个周级别的下跌通道，从前天开始DOT开始突破向上密集区的压力点位，进行上升这个时候很多人都觉得DOT的行情来了。全市金融机构人民币存款余额4.09万亿元，同比增长7.0%。各位天涯社区论坛的大神们，本人目前已29岁，男，家在西部某省会城市，毕业于普通二本，无意间看到二本高校招聘行政管理岗位，就打算试一下，现在笔试、面试已过，结果发现是人事代理人员，本人对高校的各种情况不太了解，麻烦了解的各位大神能帮我解答一下，我有必要去吗。
Gaostudiedasastudentfor5years,andgotthedoctordegreeinelectronicengineering(PhD),inShizuokaUniversity,Japan,2002.Duringdoctorcourse,Gaoetal.foundanimprovedliquidphaseepitaxy(LPE)methodnamedmeltepitaxy(ME).InAsSbthickepilayerswithcutoffwavelengthsof812µmweregrownonInAssubstratesbymeltepitaxy.Thethicknessoftheepilayersreached100µm.Thisthicknesseffectivelysuppressedtheaffectionofthelatticemismatch,thuscrystalqualityoflongwavelengthInAsSbmaterialshasbeenraised.VanderPauwmeasurementsshowedthat300KelectronmobilitiesofInAsSbthicklayersarehigherthan50000cm2/Vswithcarrierdensitiesof(13)x1016cm3.
FoundandpublishedpapersinJapan:
[1]Y.Z.GaoandT.Yamaguchi,LiquidPhaseEpitaxialGrowthandPropertiesofInSbBiFilmsgrownfromIn,Bi,andSnSolutions,CrystalResearchandTechnology,1999,34(3):285292.
[2]Y.Z.Gao,X.Y.Gong,H.Kan,M.Aoyama,andT.Yamaguchi,InAs1ySbySingleCrystalswithCutoffWavelengthof812µmGrownbyaNewMethod,JapaneseJournalofAppliedPhysics,1999,38(4A):19391940.
[3]Y.Z.Gao,H.Kan,J.I.Murata,M.Aoyama,andT.Yamaguchi,HighPurityInxGa1xSbSingleCrystalswithCutoffWavelengthof78µmGrownbyMeltEpitaxy,JournalofELECTRONICMATERIALS,2000,29(10):L25L27.
[4]Y.Gao,H.Kan,andT.Yamaguchi,TheImprovementofLowTemperatureMobilityofInAs0.04Sb0.96EpilayerswithCutOffWavelengthof12.5µmbyAnnealing,CrystalResearchandTechnology,2000,35(8):943947.
[5]Y.Z.Gao,H.Kan,M.Aoyama,andT.Yamaguchi,GermaniumandZincDopedPtypeInAsSbSingleCrystalswithaCutoffWavelengthof12.5µm,JapaneseJournalofAppliedPhysics,2000,39(5A):25202522.
[6]Y.Z.Gao,H.Kan,F.S.Gao,X.Y.Gong,andT.Yamaguchi,ImprovedpurityoflongwavelengthInAsSbepilayersgrownbymeltepitaxyinfusedsilicaboats,JournalofCrystalGrowth,2002,234:8590.
InAsSbthicklayersgrownonGaAssubstratesbymeltepitaxy：
Y.Z.Gao,X.Y.Gong,Y.H.Chen,andT.Yamaguchi,HighQualityInAs0.04Sb0.96/GaAsSingleCrystalswithaCutoffWavelengthof12μmGrownbyMeltEpitaxy,ProceedingofSPIE,2006,6029:357363.
(2)AletterofProf.Robert
Prof.RobertinStanfordUniversitywrotealettertousin2001.HeisaneditorialboardofJournalofCrystalGrowth.“Intheopinionofthereviewers,meltepitaxyasinventedbyGAOetal.isanimportantnewdevelopmentforliquidphaseepitaxy.”
(3)MeltepitaxyandInAsSbthicklayersareinabookpublishedbyWILEY
M.Mauk,Chapter12.LiquidPhaseEpitaxy:ASurveyofCapabilities,RecentDevelopmentsandSpecializedApplications,inLiquidPhaseEpitaxyofElectronic,OpticalandOptoelectronicMaterials(edsP.CapperandM.Mauk),2007,JohnWiley&Sons,Ltd,Chichester,UK(PrintISBN:9780470852903).
(4)Patents
JapanPatentNo.2000－86379
ChinaPatentNo.ZL201310397546.0,ChangecompositionofInAsSbmaterials
(5)IEEEMembership
GaoisanIEEEMembership(IEEEMembershipNumber:94891511).
(6)VisitingProfessor
AfterreturnedtoChina,wenttoShizuokaUniversity,JapanagaintoworkasaVisitingProfessorforhalfayearin2011.
(7)UncooledlongwavelengthInAsSbphotodetectorsfabricatedbymeltepitaxy
HighsensitivityuncooledInAsSbphotoconductorswithlongwavelengthweresuccessfullyfabricated.ThedetectorsarebasedonInAsSbthickepilayerswiththethicknessof100µmgrownonInAssubstratesbymeltepitaxy.Immersionlensesweresetonthedevices.Atroomtemperature(295K),thephotoresponsewavelengthrangewas210µm.ThepeakdetectivitiesD*(6.5µm,800)werelargerthan1.0×109cmHz1/2W1.Theresponsetimeis101µs,whichisatleastthreeordersofmagnitudefasterthanheatdetectors.
[1]Y.Z.Gao,X.Y.Gong,G.H.Wu,Y.B.Feng,T.Makino,andH.Kan,UncooledInAsSbPhotoconductorswithLongWavelength,JapaneseJournalofAppliedPhysics,2011,50(6):0602061–0602063.
[2]YuzhuGao,XiuyingGong,GuanghuiWu,YanbinFeng,TakamitsuMakino,HirofumiKan,TadanobuKoyama,andYasuhiroHayakawa,InAsSbthickepilayersappliedtolongwavelengthphotoconductors,InternationalJournalofMinerals,Metallurgy,andMaterials,2013,20(4):393396.
[3]Y.Z.Gao,X.Y.Gong,J.J.Li,Y.B.Feng,T.Makino,H.Kan,T.KoyamaandY.Hayakawa,ImprovedperformanceofInAs0.07Sb0.93photoconductorsoperatingatroomtemperature,Optik,2017,142:6872.
。
美国是以虚拟经济为主，而股市又是虚拟经济的一个重要组成部分，股市垮，美国经济即垮。
站在大的趋势下BTC和很多币种连续几天都处于阴跌下滑状态，BTC更是形成了一个周级别的下跌通道，从前天开始DOT开始突破向上密集区的压力点位，进行上升这个时候很多人都觉得DOT的行情来了。全市金融机构人民币存款余额4.09万亿元，同比增长7.0%。各位天涯社区论坛的大神们，本人目前已29岁，男，家在西部某省会城市，毕业于普通二本，无意间看到二本高校招聘行政管理岗位，就打算试一下，现在笔试、面试已过，结果发现是人事代理人员，本人对高校的各种情况不太了解，麻烦了解的各位大神能帮我解答一下，我有必要去吗。
